gs3 a thru gs3m sur f ace mount genera l rectifier reverse v oltage - 50 to 1000 v olts forward current - 3.0 amperes maximum r a tings and electrica l characteristics GS3A vo l ts vo l ts vo l ts symbols units amps amps v olts v rrm v rms v dc i ( a v) i fsm v f 3.0 100.0 1.15 operating junction and storage temperature range maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current at t l =75 c peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) maximum instantaneous forward voltage at 3.0a maximum dc reverse current t a =25 c at rated dc blocking voltage t a =100 c t ypical junction capacitance (note 1) note: 1.measured at 1mhz and applied reverse voltage of 4.0v d.c. 2. p .c.b. mounted with 0.2x0.2 (5.0x5.0mm) copper pad areas i r 10.0 100.0 r ja c j t j , t stg 47.0 60.0 -65 to +150 pf c a t ypical thermal resistance (note 2) c/w ratings at 25 c ambient temperature unless otherwise specified. sing le phase half-wave 60hz,resistive or inductive load,for capacitive load current derate by 20%. gs3b gs3d gs3g gs3j gs3k gs3m 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 dimensions in inches and (millimeters) case : jedec do-214ab molded plastic body over passivated chip t erminals : solder plated, solderable per mil-std-750, method 2026 polarity : color band denotes cathode end mounting position : any w eight :0.007 ounce, 0.25grams the plastic package carries underwriters laboratory flammability classification 94 v -0 for surface mounted applications low reverse leakage built-in strain relief,ideal for automated placement high forward surge current capability high temperature soldering guaranteed: 250 c/10 seconds at terminals fe a tures mechanica l d at a 0.280(7. 1 1) 0.260(6.60) 0.245(6.22) 0.220(5.59) do-214ab 0.126 (3.20) 0. 1 14 (2.90) 0.060(1.52) 0.030(0.76) 0.320(8.13) 0.305(7.75) 0.012(0.305) 0.006(0.152) 0.008(0.203)max. 0.103(2.62) 0.079(2.06) glass passivated chip junction www.shunyegroup.com
r a tings and characteristic cu r ves gs3 a thru gs3m 3.0 2.4 1.8 1.2 0.6 0 0 25 50 75 100 125 150 175 100 80 60 40 20 0 0.6 0.8 1.0 1.2 1.4 1.5 0.1 1.0 10 100 0.01 0.1 1 10 100 100 10 1 0.1 reverse vo lt age,vo l ts t,pulse dur a tion,sec. fig. 5-typica l junction ca p aci t ance fig. 6-typica l transient therma l impedanc e fig. 3-typica l ins t an t aneous fo r w ard characteristics number of cycles a t 60 hz fig. 2-maximum non-repetitive peak fo r w ard surge current fig. 1- fo r w ard current der a ting cu r ve , t n e r r u c d e i f i t c e r d r a w r o f e g a r e v a s e r e p m a d r a w r o f s u o e n a t n a t s n i s e r e p m a , t n e r r u c f p , e c n a t i c a p a c n o i t c n u j , t n e r r u c e g r u s d r a w r o f k a e p s e r e p m a ins t an t aneous fo r w ard vo lt age, vo l ts single phase half w ave 60hz resistive or inductive load 1 10 100 8.3ms single half sine- w a ve (jedec method) 0.0 1 0. 1 1 2 0 1 0 t j =25 c 2 20 200 400 0 20 40 60 80 100 1,000 100 10 1 0.1 0.01 tj=100 c tj=25 c tj=150 c percent of peak reverse vo lt age,% fig. 4-typica l reverse characteristics , t n e r r u c e s r e v e r s u o e n a t n a t s n i s e r e p m a o r c i m , e c n a d e p m i l a m r e h t t n e i s n a r t w / c ambient temper a ture, c t j =25 c pulse width=300 s 1%dut y cycle www.shunyegroup.com
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